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Now over 1,500 items in our Store! N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. On–resistance Area Product about One–half that of Standard * MOSFETs with New Low Voltage, Low R DS(on) Technology Faster Switching than E–FET Predecessors * Features Common to TMOS V and TMOS E–FETS I DSS and V DS(on) Specified at Elevated Temperature Static Parameters are the Same for both TMOS V and TMOS E–FET for other great component bargains on Microprocessors, Transistors, Capacitors, IC's, Transformers, Diodes, Crystals, and more! And we salute our friends in other countries around the world! (We do not proofread any ads submitted by members) |
j_tyler@desmoines-classifieds.com (Jose Tyler) for more information. Your emails will be instantly forwarded to the poster's private address.
